IXGQ20N120B

Specifications

Yayın Yılı

2004

Vceon Max Vge Ic

3.4V @ 15V, 20A

Kurşunsuz Kodu

yes

Polaritychannel Type

N-CHANNEL

Case Connection

COLLECTOR

Terminal Kaplaması

PURE TIN

Gate Charge

62nC

Max Collector Current

40A

Turn On Time

43 ns

Collector Emitter Voltage Vceo

3.4V

Kılıf / Paket

TO-3P-3, SC-65-3

Qualification Status

Not Qualified

Voltage Collector Emitter Breakdown Max

1200V

Weight

5.500006g

Collectoremitter Saturation Voltage

3.4V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Reverse Recovery Time

40 ns

Element Configuration

Single

Igbt Type

PT

Power Max

190W

Test Conditions

960V, 20A, 10 Ω, 15V

Giriş Tipi

Standard

Collectoremitter Breakdown Voltage

1.2kV

Turn Off Timenom Toff

630 ns

Transistor Element Material

SILICON

Td Onoff25c

20ns/270ns

RoHS Durumu

ROHS3 Compliant

Gateemitter Voltagemax

20V

Terminal Sayısı

3

Pin Sayısı

2

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Switching Energy

2.1mJ (off)

Current Collector Pulsed Icm

100A

Transistor Application

POWER CONTROL

Gateemitter Thr Voltagemax

5V

Montaj

Through Hole

Temel Parça No

IXG*20N120

Montaj Tipi

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED