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C3 ChipZentronix
IXGQ170N30PB

IXYS

IXGQ170N30PB

Single IGBTs

RoHS: Compliant

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Specifications

Montaj Tipi
Through Hole
Number Of Elements
1
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Montaj
Through Hole
Çalışma Sıcaklığı
-55°C~150°C TJ
Terminal Pozisyonu
SINGLE
Ambalaj
Tube
JESD-609 Kodu
e3
Max Power Dissipation
330W
Configuration
SINGLE
Seri
Polar™
Transistor Element Material
SILICON
RoHS Durumu
ROHS3 Compliant
Parça Durumu
Active
Pin Sayısı
2
Terminal Sayısı
3
Giriş Tipi
Standard
Collectoremitter Breakdown Voltage
300V
Turn Off Timenom Toff
259 ns
Jesd30 Code
R-PSFM-T3
Transistor Application
POWER CONTROL
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Weight
5.500006g
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Qualification Status
Not Qualified
Power Max
330W
Polaritychannel Type
N-CHANNEL
Terminal Kaplaması
Matte Tin (Sn)
Case Connection
COLLECTOR
Yayın Yılı
2006
Vceon Max Vge Ic
1.7V @ 15V, 85A
Kurşunsuz Kodu
yes
Collector Emitter Voltage Vceo
1.7V
Kılıf / Paket
TO-3P-3, SC-65-3
Gate Charge
143nC
Max Collector Current
170A
Turn On Time
103 ns

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