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IXGP50N33TBM-A

IXYS

IXGP50N33TBM-A

Single IGBTs

RoHS: Compliant

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RoHS

Compliant

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Specifications

Qualification Status
Not Qualified
Weight
2.299997g
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Power Max
50W
Igbt Type
Trench
Kurşunsuz Kodu
yes
Vceon Max Vge Ic
1.6V @ 15V, 25A
Yayın Yılı
2008
Polaritychannel Type
N-CHANNEL
Terminal Kaplaması
Matte Tin (Sn)
Case Connection
ISOLATED
Max Collector Current
30A
Gate Charge
42nC
Turn On Time
45 ns
Kılıf / Paket
TO-220-3
Collector Emitter Voltage Vceo
1.6V
Montaj
Through Hole
Montaj Tipi
Through Hole
Number Of Elements
1
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
JESD-609 Kodu
e3
Max Power Dissipation
50W
Configuration
SINGLE
Çalışma Sıcaklığı
-55°C~150°C TJ
Terminal Pozisyonu
SINGLE
Ambalaj
Tube
Giriş Tipi
Standard
Turn Off Timenom Toff
344 ns
Collectoremitter Breakdown Voltage
330V
Transistor Element Material
SILICON
Parça Durumu
Obsolete
Pin Sayısı
3
Terminal Sayısı
3
RoHS Durumu
RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Jedec95 Code
TO-220AB
Jesd30 Code
R-PSFM-T3
Transistor Application
POWER CONTROL

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