Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collectoremitter Breakdown Voltage
- 600V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Pin Sayısı
- 3
- Igbt Type
- PT
- JESD-609 Kodu
- e3
- Case Connection
- COLLECTOR
- Yayın Yılı
- 2009
- Transistor Application
- POWER CONTROL
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Power Max
- 220W
- Gateemitter Thr Voltagemax
- 5.5V
- Weight
- 2.299997g
- Test Conditions
- 300V, 20A, 5 Ω, 15V
- Montaj
- Through Hole
- Fabrika Tedarik Süresi
- 26 Weeks
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Collectoremitter Saturation Voltage
- 3V
- Reach Svhc
- No SVHC
- RoHS Durumu
- ROHS3 Compliant
- Vceon Max Vge Ic
- 3V @ 15V, 20A
- Pin Sayısı
- 3
- Qualification Status
- Not Qualified
- Turn Off Timenom Toff
- 160 ns
- Terminal Sayısı
- 3
- Giriş Tipi
- Standard
- Max Power Dissipation
- 220W
- Temel Parça No
- IXG*30N60
- Max Collector Current
- 60A
- Gateemitter Voltagemax
- 20V
- REACH Uyumluluk Kodu
- unknown
- Gate Charge
- 38nC
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Seri
- GenX3™
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