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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Igbt Type
- PT
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 1.2kV
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Polaritychannel Type
- N-CHANNEL
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fabrika Tedarik Süresi
- 26 Weeks
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- POWER CONTROL
- Yayın Yılı
- 2009
- Case Connection
- COLLECTOR
- JESD-609 Kodu
- e3
- Montaj
- Through Hole
- Test Conditions
- 600V, 16A, 15 Ω, 15V
- Weight
- 2.299997g
- Gateemitter Thr Voltagemax
- 5V
- Power Max
- 180W
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Additional Feature
- LOW CONDUCTION LOSS
- RoHS Durumu
- ROHS3 Compliant
- Vceon Max Vge Ic
- 3.1V @ 15V, 16A
- Yükseklik
- 16mm
- Uzunluk
- 10.66mm
- Turn Off Timenom Toff
- 720 ns
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Qualification Status
- Not Qualified
- Gate Charge
- 51nC
- REACH Uyumluluk Kodu
- unknown
- Gateemitter Voltagemax
- 20V
- Max Collector Current
- 36A
- Temel Parça No
- IXG*20N120
- Max Power Dissipation
- 180W
- Giriş Tipi
- Standard
- Switching Energy
- 920μJ (on), 560μJ (off)
- Turn On Time
- 61 ns
- Seri
- GenX3™
- Voltage Collector Emitter Breakdown Max
- 1200V
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