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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- POWER CONTROL
- Yayın Yılı
- 2000
- Montaj
- Through Hole
- Test Conditions
- 960V, 15A, 10 Ω, 15V
- Temel Parça No
- IXG*15N120
- Max Power Dissipation
- 150W
- Weight
- 2.299997g
- Giriş Tipi
- Standard
- Gateemitter Thr Voltagemax
- 5V
- Power Max
- 150W
- Fabrika Tedarik Süresi
- 8 Weeks
- Gate Charge
- 69nC
- Gateemitter Voltagemax
- 20V
- Max Collector Current
- 30A
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 1.2kV
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Qualification Status
- Not Qualified
- Polaritychannel Type
- N-CHANNEL
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Turn Off Timenom Toff
- 660 ns
- Igbt Type
- PT
- Pin Sayısı
- 3
- Element Configuration
- Single
- Collectoremitter Saturation Voltage
- 3.2V
- Td Onoff25c
- 25ns/180ns
- Kılıf / Paket
- TO-220-3
- Montaj Tipi
- Through Hole
- Vceon Max Vge Ic
- 3.2V @ 15V, 15A
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Switching Energy
- 1.75mJ (off)
- Number Of Elements
- 1
- Turn On Time
- 43 ns
- Seri
- HiPerFAST™
- Voltage Collector Emitter Breakdown Max
- 1200V
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