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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 2
- Turn Off Timenom Toff
- 1520 ns
- Terminal Sayısı
- 2
- Qualification Status
- Not Qualified
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vcesatmax
- 4 V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Pin Sayısı
- 3
- Gate Charge
- 180nC
- Gateemitter Voltagemax
- 20V
- Test Conditions
- 800V, 25A, 33 Ω, 15V
- Montaj
- Through Hole
- Giriş Tipi
- Standard
- Gateemitter Thr Voltagemax
- 5V
- Power Max
- 200W
- Transistor Application
- POWER CONTROL
- Tepe Reflow Sıcaklığı (°C)
- 260
- JESD-609 Kodu
- e3
- Case Connection
- COLLECTOR
- Collector Emitter Voltage Vceo
- 1kV
- Current Collector Pulsed Icm
- 100A
- Terminal Kaplaması
- Matte Tin (Sn)
- Kurşunsuz Kodu
- yes
- Turn On Time
- 350 ns
- Number Of Elements
- 1
- Switching Energy
- 5mJ (off)
- Tepe Reflow Süresi (maks. sn)
- 35
- Voltage Collector Emitter Breakdown Max
- 1000V
- Terminal Formu
- PIN/PEG
- Currentcollector Ic Max
- 50A
- Jesd30 Code
- O-MBFM-P2
- Parça Durumu
- Obsolete
- Transistor Element Material
- SILICON
- Additional Feature
- HIGH SPEED
- Montaj Tipi
- Through Hole
- Power Dissipation Ambientmax
- 200W
- Power Dissipationmax Abs
- 200W
- RoHS Durumu
- ROHS3 Compliant
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