IXGK55N120A3H1

Specifications

Collector Emitter Voltage Vceo Max

1.2 kV

Igbt Type

PT

Pin Sayısı

3

Eccn Us

EAR99

Collectoremitter Breakdown Voltage

1.2kV

Configuration

SINGLE WITH BUILT-IN DIODE

Tab

Tab

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Maximum Gate Emitter Voltage V

±20

Ambalaj

Tube

Polaritychannel Type

N-CHANNEL

Typical Collector Emitter Saturation Voltage V

1.85

Fabrika Tedarik Süresi

8 Weeks

Yayın Yılı

2010

Transistor Application

POWER CONTROL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e1

Case Connection

COLLECTOR

Montaj

Through Hole

Test Conditions

960V, 55A, 3 Ω, 15V

Power Max

460W

Gateemitter Thr Voltagemax

5V

Maximum Power Dissipation Mw

460

Number Of Elements

1

Kurşunsuz Kodu

yes

Package Height

26.16(Max)

Additional Feature

ULTRA FAST, LOW CONDUCTION LOSS

Minimum Operating Temperature C

-55

Minimum Operating Temperature

- 55 C

Vceon Max Vge Ic

2.3V @ 15V, 55A

RoHS Durumu

ROHS3 Compliant

Collectoremitter Saturation Voltage

1.85 V

Maximum Continuous Collector Current A

125

Terminal Sayısı

3

Turn Off Timenom Toff

1253 ns

Channel Type

N

Continuous Collector Current At25 C

125 A

Supplier Package

TO-264

Qualification Status

Not Qualified