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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 1.7kW
- Package Height
- 26.16(Max)
- Additional Feature
- LOW CONDUCTION LOSS
- Minimum Operating Temperature C
- -55
- Number Of Elements
- 1
- Maximum Power Dissipation Mw
- 1700000
- Kurşunsuz Kodu
- yes
- Collectoremitter Saturation Voltage
- 600V
- Maximum Continuous Collector Current A
- 500
- RoHS Durumu
- ROHS3 Compliant
- Vceon Max Vge Ic
- 1.6V @ 15V, 100A
- Configuration
- Single
- Collectoremitter Breakdown Voltage
- 600V
- Tab
- Tab
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Polaritychannel Type
- N-CHANNEL
- Ambalaj
- Tube
- Maximum Gate Emitter Voltage V
- ±20
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Igbt Type
- PT
- Pin Sayısı
- 3
- Transistor Application
- POWER CONTROL
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Yayın Yılı
- 2010
- Case Connection
- COLLECTOR
- JESD-609 Kodu
- e1
- Test Conditions
- 480V, 100A, 1 Ω, 15V
- Montaj
- Through Hole
- Gateemitter Thr Voltagemax
- 5V
- Power Max
- 1700W
- Typical Collector Emitter Saturation Voltage V
- 2
- Fabrika Tedarik Süresi
- 30 Weeks
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Ppap
- No
- Automotive
- No
- Eu Rohs
- Compliant with Exemption
- Jesd30 Code
- R-PSFM-T3
- Switching Energy
- 2.7mJ (on), 3.5mJ (off)
- Turn On Time
- 115 ns
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