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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2004
- Transistor Application
- POWER CONTROL
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Case Connection
- COLLECTOR
- Weight
- 10.000011g
- Max Power Dissipation
- 660W
- Temel Parça No
- IXG*120N60
- Test Conditions
- 480V, 100A, 2.4 Ω, 15V
- Montaj
- Through Hole
- Giriş Tipi
- Standard
- Gateemitter Thr Voltagemax
- 5.5V
- Power Max
- 660W
- Gate Charge
- 350nC
- Max Collector Current
- 200A
- Gateemitter Voltagemax
- 20V
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 600V
- Qualification Status
- Not Qualified
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Turn Off Timenom Toff
- 540 ns
- Terminal Sayısı
- 3
- Igbt Type
- PT
- Pin Sayısı
- 3
- Element Configuration
- Single
- Fall Timemax Tf
- 280ns
- Collectoremitter Saturation Voltage
- 2.1V
- Td Onoff25c
- 60ns/200ns
- Kılıf / Paket
- TO-264-3, TO-264AA
- Montaj Tipi
- Through Hole
- Vceon Max Vge Ic
- 2.1V @ 15V, 120A
- RoHS Durumu
- RoHS Compliant
- Parça Durumu
- Obsolete
- Transistor Element Material
- SILICON
- Seri
- HiPerFAST™
- Turn On Time
- 120 ns
- Number Of Elements
- 1
- Switching Energy
- 2.4mJ (on), 5.5mJ (off)
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