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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 3
- Igbt Type
- PT
- Turn Off Timenom Toff
- 910 ns
- Terminal Sayısı
- 3
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Qualification Status
- Not Qualified
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Collectoremitter Breakdown Voltage
- 600V
- Gateemitter Voltagemax
- 20V
- Max Collector Current
- 150A
- Gate Charge
- 140nC
- Fabrika Tedarik Süresi
- 30 Weeks
- Giriş Tipi
- Standard
- Gateemitter Thr Voltagemax
- 5V
- Test Conditions
- 480V, 44A, 5 Ω, 15V
- Montaj
- Through Hole
- Max Power Dissipation
- 330W
- Case Connection
- COLLECTOR
- JESD-609 Kodu
- e1
- Transistor Application
- POWER CONTROL
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Yayın Yılı
- 2009
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current Collector Pulsed Icm
- 370A
- Collector Emitter Voltage Vceo
- 1.35V
- Jedec95 Code
- TO-247AD
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Turn On Time
- 66 ns
- Number Of Elements
- 1
- Switching Energy
- 1mJ (on), 3.75mJ (off)
- Seri
- GenX3™
- Jesd30 Code
- R-PSFM-T3
- Additional Feature
- LOW CONDUCTION LOSS
- Power Dissipation
- 330W
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
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