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IXGH50N60A

IXYS

IXGH50N60A

Single IGBTs

RoHS: Compliant

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Compliant

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Specifications

Collectoremitter Breakdown Voltage
600V
Voltage Rated Dc
600V
Çalışma Sıcaklığı
-55°C~150°C TJ
Polaritychannel Type
N-CHANNEL
Ambalaj
Bulk
Nem Hassasiyeti (MSL)
Not Applicable
Rise Time
210ns
Pin Sayısı
3
Transistor Application
MOTOR CONTROL
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Yayın Yılı
1997
Case Connection
COLLECTOR
JESD-609 Kodu
e1
Montaj
Through Hole
Test Conditions
480V, 50A, 2.7 Ω, 15V
Weight
6.500007g
Gateemitter Thr Voltagemax
5V
Power Max
250W
Akım Değeri
24A
Number Of Elements
1
Kurşunsuz Kodu
yes
Fall Timemax Tf
200ns
Kurşunsuz
Lead Free
RoHS Durumu
RoHS Compliant
Vceon Max Vge Ic
2.7V @ 15V, 50A
Pin Sayısı
3
Qualification Status
Not Qualified
Turn Off Timenom Toff
880 ns
Terminal Sayısı
3
Temel Parça No
IXG*50N60
Max Power Dissipation
250W
Giriş Tipi
Standard
Gate Charge
200nC
Gateemitter Voltagemax
20V
Max Collector Current
75A
Parça Durumu
Obsolete
Transistor Element Material
SILICON
Turn On Time
290 ns
Switching Energy
4.8mJ (off)
Seri
HiPerFAST™

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