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C3 ChipZentronix
IXGH38N60U1

IXYS

IXGH38N60U1

Single IGBTs

RoHS: Compliant

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Specifications

Fall Timemax Tf
1100ns
Element Configuration
Single
Drain To Source Breakdown Voltage
600V
Kılıf / Paket
TO-247-3
RoHS Durumu
RoHS Compliant
Vceon Max Vge Ic
1.8V @ 15V, 38A
Montaj Tipi
Through Hole
Parça Durumu
Obsolete
Transistor Element Material
SILICON
Power Dissipation
200W
Jesd30 Code
R-PSFM-T3
Turn On Time
200 ns
Number Of Elements
1
Collector Emitter Voltage Vceo
1.8V
Jedec95 Code
TO-247AD
Case Connection
COLLECTOR
Yayın Yılı
2012
Transistor Application
POWER CONTROL
Giriş Tipi
Standard
Max Power Dissipation
200W
Montaj
Through Hole
Max Collector Current
76A
Operating Temperature Max
150°C
Collectoremitter Breakdown Voltage
600V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Polaritychannel Type
N-CHANNEL
Ambalaj
Tube
Qualification Status
Not Qualified
Continuous Drain Current Id
38A
Terminal Sayısı
3
Turn Off Timenom Toff
1800 ns

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