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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Igbt Type
- PT
- Pin Sayısı
- 3
- Uzunluk
- 16.26mm
- Terminal Sayısı
- 3
- Turn Off Timenom Toff
- 660 ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Qualification Status
- Not Qualified
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Polaritychannel Type
- N-CHANNEL
- Ambalaj
- Tube
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 1.2kV
- Gate Charge
- 170nC
- Max Collector Current
- 70A
- Fabrika Tedarik Süresi
- 8 Weeks
- Weight
- 6.500007g
- Max Power Dissipation
- 300W
- Montaj
- Through Hole
- Test Conditions
- 960V, 35A, 5 Ω, 15V
- Temel Parça No
- IXG*35N120
- Giriş Tipi
- Standard
- Power Max
- 300W
- Yayın Yılı
- 2000
- Transistor Application
- POWER CONTROL
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Case Connection
- COLLECTOR
- Jedec95 Code
- TO-247AD
- Collector Emitter Voltage Vceo
- 1.2kV
- Current Collector Pulsed Icm
- 140A
- Genişlik
- 5.3mm
- Kurşunsuz Kodu
- yes
- Seri
- HiPerFAST™
- Switching Energy
- 3.8mJ (off)
- Number Of Elements
- 1
- Turn On Time
- 86 ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Voltage Collector Emitter Breakdown Max
- 1200V
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Additional Feature
- LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES
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