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IXGH32N60B

IXYS

IXGH32N60B

Single IGBTs

RoHS: Compliant

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Compliant

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Specifications

Pin Sayısı
3
Collectoremitter Breakdown Voltage
600V
Voltage Rated Dc
600V
Çalışma Sıcaklığı
-55°C~150°C TJ
Vcesatmax
2.5 V
Nem Hassasiyeti (MSL)
Not Applicable
Ambalaj
Bulk
Polaritychannel Type
N-CHANNEL
Turn Off Timenom Toff
240 ns
Terminal Sayısı
3
Radyasyon Dayanımı
No
Rise Time
20ns
Pin Sayısı
3
Yayın Yılı
2000
Transistor Application
MOTOR CONTROL
Turn On Delay Time
25 ns
Case Connection
COLLECTOR
Max Power Dissipation
200W
Weight
6.500007g
Temel Parça No
IXG*32N60
Test Conditions
480V, 32A, 4.7 Ω, 15V
Montaj
Through Hole
Giriş Tipi
Standard
Gateemitter Thr Voltagemax
5V
Gate Charge
125nC
Max Collector Current
60A
Gateemitter Voltagemax
20V
Parça Durumu
Obsolete
Transistor Element Material
SILICON
Akım Değeri
60A
Seri
HiPerFAST™
Switching Energy
800μJ (off)
Number Of Elements
1
Turn On Time
50 ns
Current Collector Pulsed Icm
120A
Collector Emitter Voltage Vceo
600V
Jedec95 Code
TO-247AD
Kurşunsuz Kodu
yes
Element Configuration
Single
Fall Timemax Tf
150ns

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