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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rise Timemax
- 200ns
- Max Collector Current
- 50A
- Gateemitter Voltagemax
- 30V
- Max Power Dissipation
- 200W
- Montaj
- Through Hole
- Temel Parça No
- IXG*30N60
- Gateemitter Thr Voltagemax
- 5V
- Giriş Tipi
- Standard
- Yayın Yılı
- 1997
- Turn On Delay Time
- 100 ns
- Transistor Application
- POWER CONTROL
- Case Connection
- COLLECTOR
- Continuous Drain Current Id
- 60A
- Terminal Sayısı
- 3
- Turn Off Timenom Toff
- 850 ns
- Qualification Status
- Not Qualified
- Vcesatmax
- 3 V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Collectoremitter Breakdown Voltage
- 600V
- Operating Temperature Max
- 150°C
- Montaj Tipi
- Through Hole
- Vceon Max Vge Ic
- 3V @ 15V, 30A
- RoHS Durumu
- RoHS Compliant
- Kılıf / Paket
- TO-247-3
- Kurşunsuz
- Lead Free
- Drain To Source Breakdown Voltage
- 600V
- Turn Off Delay Time
- 500 ns
- Element Configuration
- Single
- Jedec95 Code
- TO-247AD
- Collector Emitter Voltage Vceo
- 3V
- Turn On Time
- 300 ns
- Number Of Elements
- 1
- Drain To Source Resistance
- 2.6Ohm
- Jesd30 Code
- R-PSFM-T3
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Power Dissipation
- 200W
- Additional Feature
- HIGH SPEED
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