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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- 35
- Voltage Collector Emitter Breakdown Max
- 1200V
- Switching Energy
- 11mJ (off)
- Number Of Elements
- 1
- Turn On Time
- 350 ns
- Terminal Kaplaması
- Matte Tin (Sn)
- Kurşunsuz Kodu
- yes
- Jedec95 Code
- TO-247AD
- Collector Emitter Voltage Vceo
- 1.2kV
- Current Collector Pulsed Icm
- 100A
- Element Configuration
- Single
- Td Onoff25c
- 100ns/650ns
- Kılıf / Paket
- TO-247-3
- Vceon Max Vge Ic
- 3V @ 15V, 25A
- RoHS Durumu
- ROHS3 Compliant
- Montaj Tipi
- Through Hole
- Collectoremitter Breakdown Voltage
- 1.2kV
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Qualification Status
- Not Qualified
- Vcesatmax
- 3 V
- Terminal Sayısı
- 3
- Turn Off Timenom Toff
- 1920 ns
- Pin Sayısı
- 3
- JESD-609 Kodu
- e3
- Case Connection
- COLLECTOR
- Yayın Yılı
- 1997
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Application
- POWER CONTROL
- Power Max
- 200W
- Gateemitter Thr Voltagemax
- 6V
- Giriş Tipi
- Standard
- Max Power Dissipation
- 200W
- Weight
- 6.500007g
- Montaj
- Through Hole
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