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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 1997
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Transistor Application
- POWER CONTROL
- JESD-609 Kodu
- e1
- Case Connection
- COLLECTOR
- Max Power Dissipation
- 200W
- Montaj
- Through Hole
- Test Conditions
- 800V, 25A, 33 Ω, 15V
- Temel Parça No
- IXG*25N100
- Giriş Tipi
- Standard
- Gateemitter Thr Voltagemax
- 5.5V
- Power Max
- 200W
- Gate Charge
- 130nC
- Max Collector Current
- 50A
- Gateemitter Voltagemax
- 20V
- Collectoremitter Breakdown Voltage
- 1kV
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Qualification Status
- Not Qualified
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Polaritychannel Type
- N-CHANNEL
- Ambalaj
- Tube
- Terminal Sayısı
- 3
- Turn Off Timenom Toff
- 720 ns
- Pin Sayısı
- 3
- Fall Timemax Tf
- 800ns
- Terminal Pozisyonu
- SINGLE
- Td Onoff25c
- 100ns/500ns
- Kılıf / Paket
- TO-247-3
- Montaj Tipi
- Through Hole
- Vceon Max Vge Ic
- 4V @ 15V, 25A
- RoHS Durumu
- RoHS Compliant
- Reverse Recovery Time
- 50 ns
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Additional Feature
- HIGH SPEED
- Jesd30 Code
- R-PSFM-T3
- Switching Energy
- 5mJ (off)
- Number Of Elements
- 1
- Turn On Time
- 100 ns
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