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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Configuration
- SINGLE
- Collectoremitter Breakdown Voltage
- 1kV
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Qualification Status
- Not Qualified
- Polaritychannel Type
- N-CHANNEL
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Sayısı
- 3
- Turn Off Timenom Toff
- 1670 ns
- Pin Sayısı
- 3
- Transistor Application
- POWER CONTROL
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Yayın Yılı
- 1997
- Case Connection
- COLLECTOR
- JESD-609 Kodu
- e1
- Temel Parça No
- IXG*25N100
- Montaj
- Through Hole
- Test Conditions
- 800V, 25A, 33 Ω, 15V
- Max Power Dissipation
- 200W
- Giriş Tipi
- Standard
- Gateemitter Thr Voltagemax
- 5V
- Power Max
- 200W
- Gate Charge
- 130nC
- Gateemitter Voltagemax
- 20V
- Max Collector Current
- 50A
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Jesd30 Code
- R-PSFM-T3
- Switching Energy
- 5mJ (off)
- Number Of Elements
- 1
- Turn On Time
- 350 ns
- Voltage Collector Emitter Breakdown Max
- 1000V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Jedec95 Code
- TO-247AD
- Collector Emitter Voltage Vceo
- 3.5V
- Current Collector Pulsed Icm
- 100A
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Pozisyonu
- SINGLE
- Td Onoff25c
- 100ns/500ns
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