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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Collectoremitter Breakdown Voltage
- 600V
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Qualification Status
- Not Qualified
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Turn Off Timenom Toff
- 248 ns
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Igbt Type
- PT
- Case Connection
- COLLECTOR
- Transistor Application
- POWER CONTROL
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Yayın Yılı
- 2011
- Giriş Tipi
- Standard
- Gateemitter Thr Voltagemax
- 5V
- Power Max
- 190W
- Montaj
- Through Hole
- Test Conditions
- 360V, 24A, 10 Ω, 15V
- Max Power Dissipation
- 190W
- Gateemitter Voltagemax
- 20V
- Max Collector Current
- 56A
- Gate Charge
- 64nC
- Parça Durumu
- Obsolete
- Transistor Element Material
- SILICON
- Jesd30 Code
- R-PSFM-T3
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Turn On Time
- 52 ns
- Number Of Elements
- 1
- Switching Energy
- 400μJ (on), 300μJ (off)
- Kurşunsuz Kodu
- yes
- Jedec95 Code
- TO-247AD
- Collector Emitter Voltage Vceo
- 2.7V
- Current Collector Pulsed Icm
- 130A
- Terminal Pozisyonu
- SINGLE
- Td Onoff25c
- 21ns/143ns
- Kılıf / Paket
- TO-247-3
- Reverse Recovery Time
- 25 ns
- Vceon Max Vge Ic
- 2.7V @ 15V, 24A
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