IXGH10N100U1

Specifications

Gateemitter Voltagemax

20V

Max Collector Current

20A

Gate Charge

52nC

Gateemitter Thr Voltagemax

5.5V

Giriş Tipi

Standard

Temel Parça No

IXG*10N100

Test Conditions

800V, 10A, 150 Ω, 15V

Montaj

Through Hole

Max Power Dissipation

100W

Case Connection

COLLECTOR

Transistor Application

POWER CONTROL

Yayın Yılı

1997

Turn Off Timenom Toff

1850 ns

Terminal Sayısı

3

Ambalaj

Tube

Polaritychannel Type

N-CHANNEL

Nem Hassasiyeti (MSL)

Not Applicable

Qualification Status

Not Qualified

Çalışma Sıcaklığı

-55°C~150°C TJ

Voltage Rated Dc

1kV

Configuration

SINGLE WITH BUILT-IN DIODE

Collectoremitter Breakdown Voltage

1kV

Reverse Recovery Time

60ns

RoHS Durumu

RoHS Compliant

Vceon Max Vge Ic

3.5V @ 15V, 10A

Montaj Tipi

Through Hole

Kılıf / Paket

TO-247-3

Td Onoff25c

100ns/550ns

Terminal Pozisyonu

SINGLE

Current Collector Pulsed Icm

40A

Collector Emitter Voltage Vceo

3.5V

Jedec95 Code

TO-247AD

Voltage Collector Emitter Breakdown Max

1000V

Turn On Time

300 ns

Number Of Elements

1

Switching Energy

2mJ (off)

Jesd30 Code

R-PSFM-T3

Akım Değeri

20A

Transistor Element Material

SILICON

Parça Durumu

Obsolete