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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e1
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Qualification Status
- Not Qualified
- Polaritychannel Type
- N-CHANNEL
- Max Power Dissipation
- 360W
- Turn On Time
- 133 ns
- Vceon Max Vge Ic
- 2.3V @ 15V, 75A
- Montaj Tipi
- Through Hole
- Gate Charge
- 248nC
- Terminal Sayısı
- 3
- Case Connection
- COLLECTOR
- Switching Energy
- 3.3mJ (off)
- Transistor Application
- POWER CONTROL
- Collector Emitter Voltage Vceo
- 600V
- Pin Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Pin Sayısı
- 3
- Gateemitter Voltagemax
- 20V
- Power Max
- 360W
- Turn Off Timenom Toff
- 600 ns
- Parça Durumu
- Obsolete
- Max Collector Current
- 120A
- Td Onoff25c
- 62ns/220ns
- Gateemitter Thr Voltagemax
- 5.5V
- Test Conditions
- 480V, 75A, 5 Ω, 15V
- Giriş Tipi
- Standard
- Collectoremitter Breakdown Voltage
- 600V
- Current Collector Pulsed Icm
- 300A
- Reverse Recovery Time
- 50ns
- Number Of Elements
- 1
- RoHS Durumu
- RoHS Compliant
- Yayın Yılı
- 2002
- Montaj
- Through Hole
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Ambalaj
- Tube
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Seri
- HiPerFAST™
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