IXGB200N60B3

Specifications

Collectoremitter Saturation Voltage

1.35V

Package Height

26.59(Max)

Maximum Operating Temperature C

150

Element Configuration

Single

Ambalaj

Tube

Maximum Power Dissipation Mw

1250

Transistor Element Material

SILICON

Jesd30 Code

R-PSIP-T3

Igbt Type

PT

Current Collector Pulsed Icm

600A

Pcb Changed

3

Configuration

Single

Gateemitter Thr Voltagemax

5V

Automotive

No

Turn Off Timenom Toff

730 ns

Power Dissipation

1.25kW

Çalışma Sıcaklığı

-55°C~150°C TJ

Collector Emitter Voltage Vceo

1.5V

Switching Energy

1.6mJ (on), 2.9mJ (off)

Ppap

No

Turn On Time

122 ns

Supplier Package

PLUS 264

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Channel Type

N

Max Power Dissipation

1.25kW

Eu Rohs

Compliant with Exemption

Temel Parça No

IXG*200N60

Tab

Tab

Package Length

20.29(Max)

Fabrika Tedarik Süresi

26 Weeks

Kılıf / Paket

TO-264-3, TO-264AA

Maximum Gate Emitter Leakage Current Ua

0.1

Seri

GenX3™

Package Width

5.31(Max)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)