IXGA20N120B3

Specifications

Collector Emitter Voltage Vceo

3.1V

Switching Energy

920μJ (on), 560μJ (off)

Ppap

No

Automotive

No

Turn Off Timenom Toff

720 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Eu Rohs

Compliant with Exemption

Tab

Tab

Terminal Formu

GULL WING

Package Length

10.41(Max)

Additional Feature

LOW CONDUCTION LOSS

Supplier Package

D2PAK

Voltage Collector Emitter Breakdown Max

1200V

Turn On Time

61 ns

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Channel Type

N

Max Power Dissipation

180W

Maks. Çalışma Sıcaklığı

+ 150 C

Continuous Collector Current At25 C

36 A

Maximum Power Dissipation Mw

180

Ambalaj

Tube

Transistor Element Material

SILICON

Collectoremitter Saturation Voltage

2.7 V

Package Height

4.83(Max)

Maximum Operating Temperature C

150

Element Configuration

Single

Current Collector Pulsed Icm

80A

Pcb Changed

2

Configuration

Single

Gateemitter Thr Voltagemax

5V

Jesd30 Code

R-PSSO-G2

Igbt Type

PT

Case Connection

COLLECTOR

Transistor Application

POWER CONTROL

Collector Emitter Voltage Vceo Max

1.2 kV

Terminal Sayısı

2

Gate Charge

51nC

Typical Collector Emitter Saturation Voltage V

2.7

Max Collector Current

36A