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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Giriş Tipi
- Standard
- Current Collector Pulsed Icm
- 600A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2007
- Montaj
- Through Hole
- Test Conditions
- 1250V, 128A, 1 Ω, 15V
- Transistor Application
- POWER CONTROL
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Jesd30 Code
- R-PSIP-T3
- Gateemitter Voltagemax
- 25V
- Voltage Collector Emitter Breakdown Max
- 2500V
- Reverse Recovery Time
- 160 ns
- Transistor Element Material
- SILICON
- Case Connection
- COLLECTOR
- Number Of Elements
- 1
- Weight
- 7.300002g
- Element Configuration
- Single
- Vceon Max Vge Ic
- 3V @ 15V, 64A
- Max Collector Current
- 156A
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 2.5kV
- Collectoremitter Breakdown Voltage
- 2.5kV
- Turn On Time
- 632 ns
- Radyasyon Dayanımı
- No
- Seri
- BIMOSFET™
- Terminal Kaplaması
- TIN SILVER COPPER
- Gate Charge
- 400nC
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 28 Weeks
- Kılıf / Paket
- TO-247-3
- JESD-609 Kodu
- e1
- Ambalaj
- Tube
- Max Power Dissipation
- 735W
- Additional Feature
- LOW CONDUCTION LOSS
- Kurşunsuz
- Lead Free
- Power Max
- 735W
- Polaritychannel Type
- N-CHANNEL
- Gateemitter Thr Voltagemax
- 5V
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