IXBT42N170-TRL

Specifications

Qg Gate Charge

188 nC

Pcb Changed

2

Package Width

14(Max)

Montaj Tipi

Surface Mount

Mounting

Surface Mount

Parça Durumu

Active

Td Onoff25c

37ns/340ns

Vgs Gatesource Voltage

- 20 V, + 20 V

Tab

Tab

Supplier Package

TO-268

Maximum Power Dissipation Mw

360

Eccn Us

EAR99

Gate Charge

188nC

Fabrika Tedarik Süresi

24 Weeks

Currentcollector Ic Max

80A

Seri

BIMOSFET™

Maximum Collectoremitter Voltage V

1700

Montaj Stili

SMD/SMT

Eu Rohs

Compliant

Pd Power Dissipation

360 W

Maximum Continuous Collector Current A

80

Vds Drainsource Breakdown Voltage

1.7 kV

Channel Type

N

Number Of Channels

1 Channel

Minimum Operating Temperature C

-55

Ppap

No

Maks. Çalışma Sıcaklığı

+ 150 C

Pin Sayısı

3

Automotive

No

Giriş Tipi

Standard

Package Height

5.1(Max)

Vgs Th Gatesource Threshold Voltage

2.5 V

Voltage Collector Emitter Breakdown Max

1700V

Ambalaj

Tape and Reel

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Package Length

16.05(Max)

Maximum Gate Emitter Voltage V

±20

Power Max

360W

Transistor Polarity

N-Channel

Configuration

Single