IXBT2N250-TR

Specifications

Pin Sayısı

3

Maks. Çalışma Sıcaklığı

+ 150 C

Number Of Channels

1 Channel

Channel Type

N

Vds Drainsource Breakdown Voltage

2.5 kV

Ppap

No

Minimum Operating Temperature C

-55

Eu Rohs

Compliant

Montaj Stili

SMD/SMT

Maximum Continuous Collector Current A

5

Pd Power Dissipation

32 W

Maximum Collectoremitter Voltage V

2500

Vgs Th Gatesource Threshold Voltage

3 V

Voltage Collector Emitter Breakdown Max

2500V

Reverse Recovery Time

920ns

Package Height

5.1(Max)

Giriş Tipi

Standard

Automotive

No

Çalışma Sıcaklığı

-55°C~150°C TJ

Tab

Tab

Vgs Gatesource Voltage

- 20 V, + 20 V

Montaj Tipi

Surface Mount

Package Width

14(Max)

Td Onoff25c

30ns/70ns

Parça Durumu

Active

Mounting

Surface Mount

Pcb Changed

2

Qg Gate Charge

10.6 nC

Seri

BIMOSFET™

Currentcollector Ic Max

5A

Technology

Si

Gate Charge

10.6nC

Fabrika Tedarik Süresi

24 Weeks

Eccn Us

EAR99

Maximum Power Dissipation Mw

32

Supplier Package

TO-268

Minimum Operating Temperature

- 55 C

Vceon Max Vge Ic

3.5V @ 15V, 2A

Test Conditions

2000V, 2A, 47 Ω, 15V

Id Continuous Drain Current

5 A