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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Collector Emitter Voltage Vceo
- 2.5V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Turn On Time
- 190 ns
- Collectoremitter Breakdown Voltage
- 1.7kV
- Terminal Kaplaması
- Matte Tin (Sn)
- Seri
- BIMOSFET™
- Terminal Sayısı
- 2
- Fabrika Tedarik Süresi
- 24 Weeks
- Terminal Formu
- GULL WING
- Gate Charge
- 140nC
- Kılıf / Paket
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Ambalaj
- Tube
- Max Power Dissipation
- 250W
- JESD-609 Kodu
- e3
- Additional Feature
- LOW CONDUCTION LOSS
- Power Max
- 250W
- REACH Uyumluluk Kodu
- not_compliant
- Parça Durumu
- Active
- Polaritychannel Type
- N-CHANNEL
- Gateemitter Thr Voltagemax
- 5V
- Turn Off Timenom Toff
- 1285 ns
- Montaj Tipi
- Surface Mount
- Giriş Tipi
- Standard
- Current Collector Pulsed Icm
- 230A
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2013
- Transistor Application
- POWER CONTROL
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Terminal Pozisyonu
- SINGLE
- Qualification Status
- Not Qualified
- Gateemitter Voltagemax
- 20V
- Voltage Collector Emitter Breakdown Max
- 1700V
- Reverse Recovery Time
- 1.06 μs
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Jesd30 Code
- R-PSSO-G2
- Transistor Element Material
- SILICON
- Case Connection
- COLLECTOR
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