Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 8 Weeks
- Gate Charge
- 105nC
- Terminal Kaplaması
- Matte Tin (Sn)
- Seri
- BIMOSFET™
- Collectoremitter Breakdown Voltage
- 3kV
- Collector Emitter Voltage Vceo
- 3.2V
- Parça Durumu
- Not For New Designs
- REACH Uyumluluk Kodu
- not_compliant
- Gateemitter Thr Voltagemax
- 5V
- Polaritychannel Type
- N-CHANNEL
- Montaj Tipi
- Surface Mount
- Power Max
- 250W
- Ambalaj
- Tube
- Max Power Dissipation
- 250W
- JESD-609 Kodu
- e3
- Kılıf / Paket
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Gateemitter Voltagemax
- 20V
- Reverse Recovery Time
- 1.35 μs
- Voltage Collector Emitter Breakdown Max
- 3000V
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2013
- Giriş Tipi
- Standard
- Current Collector Pulsed Icm
- 140A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Collector Current
- 50A
- Vceon Max Vge Ic
- 3.2V @ 15V, 20A
Related Products
LUMBERG AUTOMATION
109628 0980 ESL 700
Single IGBTs
LUMBERG AUTOMATION
11119 ASBS 2 M12-4S-90
Single IGBTs
LUMBERG AUTOMATION
12138 VAD1A-1-3-226/5M
Single IGBTs
Microsemi Corporation
1214-55P
Single IGBTs
LUMBERG AUTOMATION
12180 VADM12 1A-VAD1A-1-3-226/0,4M
Single IGBTs
WEIDMÜLLER
1701230000 SAI-4-M 5P M12
Single IGBTs
Fuji Electric Co Ltd
1MBI300NN-120
Single IGBTs
Semikron
22890695
Single IGBTs