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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 2.9V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Turn On Time
- 224 ns
- Collectoremitter Breakdown Voltage
- 1.7kV
- Terminal Kaplaması
- TIN SILVER COPPER
- Seri
- BIMOSFET™
- Fabrika Tedarik Süresi
- 32 Weeks
- Temel Parça No
- IXB*42N170
- Terminal Sayısı
- 3
- Gate Charge
- 188nC
- Kılıf / Paket
- ISOPLUS247™
- Max Power Dissipation
- 200W
- Ambalaj
- Tube
- JESD-609 Kodu
- e1
- Power Max
- 200W
- Additional Feature
- UL RECOGNIZED
- Parça Durumu
- Active
- REACH Uyumluluk Kodu
- unknown
- Montaj Tipi
- Through Hole
- Turn Off Timenom Toff
- 1070 ns
- Polaritychannel Type
- N-CHANNEL
- Gateemitter Thr Voltagemax
- 5.5V
- Current Collector Pulsed Icm
- 300A
- Giriş Tipi
- Standard
- Montaj
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2008
- Transistor Application
- POWER CONTROL
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Terminal Pozisyonu
- SINGLE
- Voltage Collector Emitter Breakdown Max
- 1700V
- Reverse Recovery Time
- 1.32 μs
- Qualification Status
- Not Qualified
- Gateemitter Voltagemax
- 20V
- Jesd30 Code
- R-PSIP-T3
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
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