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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 3.2V
- Radyasyon Dayanımı
- No
- Turn On Time
- 637 ns
- Collectoremitter Breakdown Voltage
- 3kV
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Seri
- BIMOSFET™
- Fabrika Tedarik Süresi
- 28 Weeks
- Terminal Sayısı
- 3
- Gate Charge
- 335nC
- Kılıf / Paket
- TO-264-3, TO-264AA
- Ambalaj
- Tube
- Max Power Dissipation
- 625W
- JESD-609 Kodu
- e1
- Kurşunsuz
- Lead Free
- Power Max
- 625W
- Additional Feature
- LOW CONDUCTION LOSS
- Parça Durumu
- Active
- Montaj Tipi
- Through Hole
- Turn Off Timenom Toff
- 475 ns
- Polaritychannel Type
- N-CHANNEL
- Gateemitter Thr Voltagemax
- 5V
- Current Collector Pulsed Icm
- 600A
- Giriş Tipi
- Standard
- Montaj
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2009
- Transistor Application
- POWER CONTROL
- Voltage Collector Emitter Breakdown Max
- 3000V
- Reverse Recovery Time
- 1.9 μs
- Gateemitter Voltagemax
- 25V
- Jesd30 Code
- R-PSFM-T3
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Case Connection
- COLLECTOR
- Vceon Max Vge Ic
- 3.2V @ 15V, 55A
- Element Configuration
- Single
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Collector Current
- 130A
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