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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vcesatmax
- 6 V
- Kılıf / Paket
- TO-247-3
- Max Power Dissipation
- 350W
- Ambalaj
- Bulk
- Additional Feature
- BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS
- Akım Değeri
- 33A
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Turn Off Timenom Toff
- 310 ns
- Gateemitter Thr Voltagemax
- 6V
- Polaritychannel Type
- N-CHANNEL
- Montaj Tipi
- Through Hole
- Collector Emitter Voltage Vceo
- 1.6kV
- Turn On Time
- 260 ns
- Radyasyon Dayanımı
- No
- Collectoremitter Breakdown Voltage
- 1.6kV
- Seri
- BIMOSFET™
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 26 Weeks
- Gate Charge
- 130nC
- Case Connection
- COLLECTOR
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Fall Timemax Tf
- 700ns
- Vceon Max Vge Ic
- 7.1V @ 15V, 20A
- Weight
- 6.500007g
- Jedec95 Code
- TO-247AD
- Nem Hassasiyeti (MSL)
- Not Applicable
- Voltage Rated Dc
- 1.6kV
- Rise Time
- 60ns
- Pin Sayısı
- 3
- Max Collector Current
- 33A
- Giriş Tipi
- Standard
- Current Collector Pulsed Icm
- 40A
- Power Dissipation
- 350W
- Montaj
- Through Hole
- Yayın Yılı
- 2006
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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