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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 3
- Max Collector Current
- 80A
- Vceon Max Vge Ic
- 3.2V @ 15V, 32A
- Case Connection
- COLLECTOR
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Qualification Status
- Not Qualified
- Gateemitter Voltagemax
- 20V
- Reverse Recovery Time
- 1.5 μs
- Voltage Collector Emitter Breakdown Max
- 3000V
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PSFM-T3
- Transistor Application
- POWER CONTROL
- Terminal Pozisyonu
- SINGLE
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Montaj
- Through Hole
- Yayın Yılı
- 2009
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Giriş Tipi
- Standard
- Current Collector Pulsed Icm
- 280A
- Parça Durumu
- Active
- Turn Off Timenom Toff
- 795 ns
- Gateemitter Thr Voltagemax
- 5V
- Polaritychannel Type
- N-CHANNEL
- Montaj Tipi
- Through Hole
- Additional Feature
- LOW CONDUCTION LOSS
- Power Max
- 400W
- Max Power Dissipation
- 400W
- Ambalaj
- Tube
- JESD-609 Kodu
- e1
- Kılıf / Paket
- TO-247-3
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 8 Weeks
- Gate Charge
- 142nC
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Seri
- BIMOSFET™
- Turn On Time
- 573 ns
- Collectoremitter Breakdown Voltage
- 3kV
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