Volume pricing
- 1+ pcs$36.48
- 10+ pcs$34.42
- 100+ pcs$32.47
- 500+ pcs$30.63
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-247-3
- JESD-609 Kodu
- e1
- Max Power Dissipation
- 160W
- Ambalaj
- Tube
- Power Max
- 160W
- Additional Feature
- LOW CONDUCTION LOSS
- Montaj Tipi
- Through Hole
- Turn Off Timenom Toff
- 705 ns
- Gateemitter Thr Voltagemax
- 5V
- Polaritychannel Type
- N-CHANNEL
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Collector Emitter Voltage Vceo
- 3.2V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Collectoremitter Breakdown Voltage
- 3kV
- Turn On Time
- 460 ns
- Pin Sayısı
- 3
- Seri
- BIMOSFET™
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate Charge
- 62nC
- Fabrika Tedarik Süresi
- 24 Weeks
- Terminal Sayısı
- 3
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Case Connection
- COLLECTOR
- Vceon Max Vge Ic
- 3.2V @ 15V, 12A
- Max Collector Current
- 30A
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Collector Pulsed Icm
- 100A
- Giriş Tipi
- Standard
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2009
- Montaj
- Through Hole
- Transistor Application
- POWER CONTROL
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Terminal Pozisyonu
- SINGLE
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Voltage Collector Emitter Breakdown Max
- 3000V
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