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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- BIMOSFET™
- Technology
- Si
- Gate Charge
- 200nC
- Fabrika Tedarik Süresi
- 30 Weeks
- Terminal Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 3kV
- Turn On Time
- 652 ns
- Montaj Tipi
- Through Hole
- Turn Off Timenom Toff
- 950 ns
- Polaritychannel Type
- N-CHANNEL
- Parça Durumu
- Active
- Td Onoff25c
- 72ns/445ns
- Boyut / Ölçü
- 0.126 L x 0.063 W (3.20mm x 1.60mm)
- Tolerans
- ±0.5%
- Paket
- Tape & Reel (TR)
- Max Power Dissipation
- 240W
- Jesd30 Code
- R-PSIP-T3
- Composition
- Thick Film
- RoHS Durumu
- ROHS3 Compliant
- Özellikler
- Automotive AEC-Q200
- Reverse Recovery Time
- 1.7 μs
- Voltage Collector Emitter Breakdown Max
- 3000V
- Gateemitter Voltagemax
- 25V
- Direnç
- 2.8 kOhms
- Giriş Tipi
- Standard
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Maks. Oturma Yüksekliği
- 0.028 (0.70mm)
- Pin Sayısı
- 3
- Temel Ürün No
- RS73F2BRT
- Montaj Stili
- Through Hole
- Collector Emitter Voltage Vceo
- 3V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Ratings
- AEC-Q200
- Power Max
- 240W
- Gateemitter Thr Voltagemax
- 5V
- Kılıf / Paket
- i4-Pac™-4, Isolated
- Ürün Durumu
- Active
- Ambalaj
- Tube
- Test Conditions
- 1500V, 42A, 20 Ω, 15V
- Terminal Pozisyonu
- SINGLE
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