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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Collector Emitter Voltage Vceo
- 3.2V
- Collectoremitter Breakdown Voltage
- 3kV
- Turn On Time
- 460 ns
- Seri
- BIMOSFET™
- Currentcollector Ic Max
- 26A
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gate Charge
- 62nC
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 8 Weeks
- Kılıf / Paket
- i4-Pac™-5 (3 Leads)
- JESD-609 Kodu
- e1
- Ambalaj
- Tube
- Max Power Dissipation
- 100W
- Additional Feature
- LOW CONDUCTION LOSS
- Power Max
- 125W
- Turn Off Timenom Toff
- 705 ns
- Gateemitter Thr Voltagemax
- 5V
- Polaritychannel Type
- N-CHANNEL
- Montaj Tipi
- Through Hole
- Parça Durumu
- Not For New Designs
- REACH Uyumluluk Kodu
- unknown
- Giriş Tipi
- Standard
- Current Collector Pulsed Icm
- 98A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2012
- Montaj
- Through Hole
- Terminal Pozisyonu
- SINGLE
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Application
- POWER CONTROL
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PSIP-T3
- Gateemitter Voltagemax
- 20V
- Qualification Status
- Not Qualified
- Reverse Recovery Time
- 1.4 μs
- Voltage Collector Emitter Breakdown Max
- 3000V
- Transistor Element Material
- SILICON
- Case Connection
- ISOLATED
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