Volume pricing
- 1+ pcs$6.91
- 10+ pcs$6.52
- 100+ pcs$6.15
- 500+ pcs$5.80
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Giriş Tipi
- Standard
- Power Dissipation
- 85W
- Montaj
- Through Hole
- Igbt Type
- PT
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Yayın Yılı
- 2001
- Transistor Application
- POWER CONTROL
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Test Conditions
- 600V, 10A, 100 Ω, 15V
- Genişlik
- 5.3mm
- Collectoremitter Saturation Voltage
- 1.8V
- Qualification Status
- Not Qualified
- Gateemitter Voltagemax
- 20V
- Voltage Collector Emitter Breakdown Max
- 1200V
- Reverse Recovery Time
- 350ns
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Uzunluk
- 16.26mm
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Vceon Max Vge Ic
- 2.1V @ 15V, 10A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Jedec95 Code
- TO-247AD
- Switching Energy
- 1.1mJ (on), 1.1mJ (off)
- Max Collector Current
- 20A
- Pin Sayısı
- 3
- Collector Emitter Voltage Vceo
- 1.2kV
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Turn On Time
- 110 ns
- Collectoremitter Breakdown Voltage
- 1.2kV
- Terminal Kaplaması
- TIN SILVER COPPER
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 22 Weeks
- Gate Charge
- 27nC
- Kılıf / Paket
- TO-247-3
- Ambalaj
- Tube
- Max Power Dissipation
- 85W
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