GMM3X60-015X2-SMD

Specifications

Input Capacitance Ciss Max Vds

5800pF @ 25V

Material

Silicone Elastomer

Tip

Conductive Pad, Sheet

Qg Gate Charge

97 nC

Minimum Operating Temperature

- 55 C

Vgs Gatesource Voltage

- 20 V, + 20 V

Terminal Pozisyonu

DUAL

Terminal Kaplaması

TIN SILVER

Number Of Elements

6

Id Continuous Drain Current

50 A

Ds Breakdown Voltagemin

150V

Thickness

0.0394 (1.000mm)

Vds Drainsource Breakdown Voltage

150 V

Drainsource On Resistancemax

0.024Ohm

Drain To Source Voltage Vdss

150V

Seri

TG-A486G

JESD-609 Kodu

e2

Montaj Tipi

Surface Mount

Adhesive

Tacky - Both Sides

Outline

305.00mm x 200.00mm

Vgsth Max Id

4.5V @ 1mA

Number Of Channels

6 Channel

Yayın Yılı

2012

RoHS Durumu

ROHS3 Compliant

Rds On Drainsource Resistance

24 mOhms

Transistor Element Material

SILICON

Configuration

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Ambalaj

Tray

Gate Charge Qg Max Vgs

97nC @ 10V

Continuous Drain Current Id

50A

Kılıf / Paket

ISOPLUS-DIL™

Case Connection

ISOLATED

Fet Feature

Standard

Drain Currentmax Abs Id

57A

Operating Mode

ENHANCEMENT MODE

Paket

Box

Çalışma Sıcaklığı

-55°C~175°C TJ

Renk

Gray

Terminal Sayısı

24

Vgs Th Gatesource Threshold Voltage

2.5 V