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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 1000 mJ
- Rds On Max Id Vgs
- 60m Ω @ 25A, 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 20V
- ECCN Kodu
- EAR99
- Parça Durumu
- Obsolete
- Gate Charge Qg Max Vgs
- 70nC @ 10V
- Fet Feature
- Standard
- Drain Currentmax Abs Id
- 26A
- Max Power Dissipation
- 125W
- Case Connection
- ISOLATED
- Yayın Yılı
- 2011
- Kılıf / Paket
- i4-Pac™-5
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Additional Feature
- AVALANCHE RATED, UL RECOGNIZED
- Seri
- Polar™
- Montaj Tipi
- Through Hole
- Pulsed Drain Currentmax Idm
- 120A
- Terminal Kaplaması
- TIN SILVER COPPER
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.06Ohm
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tube
- Power Dissipation
- 125W
- Qualification Status
- Not Qualified
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Pin Sayısı
- 5
- Pin Sayısı
- 5
- Kurşunsuz Kodu
- yes
- Terminal Sayısı
- 5
- Current Continuous Drain Id25
- 26A 17A
- Fet Type
- N and P-Channel
- Montaj
- Through Hole
- JESD-609 Kodu
- e1
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
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