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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 250V
- RoHS Durumu
- ROHS3 Compliant
- Gate Charge Qg Max Vgs
- 78nC @ 10V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Kılıf / Paket
- i4-Pac™-5
- Power Max
- 125W
- Seri
- HiPerFET™
- Kurşunsuz Kodu
- yes
- Temel Parça No
- FMM
- Case Connection
- ISOLATED
- Qualification Status
- Not Qualified
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Rds On Max Id Vgs
- 50m Ω @ 25A, 10V
- Avalanche Energy Rating Eas
- 400 mJ
- Number Of Elements
- 2
- Max Power Dissipation
- 125W
- Fabrika Tedarik Süresi
- 30 Weeks
- Parça Durumu
- Active
- Vgsth Max Id
- 4.5V @ 250μA
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 4000pF @ 25V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2008
- Continuous Drain Current Id
- 30A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Pin Sayısı
- 5
- Ambalaj
- Tube
- JESD-609 Kodu
- e1
- ECCN Kodu
- EAR99
- Configuration
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Pozisyonu
- SINGLE
- Additional Feature
- AVALANCHE RATED, UL RECOGNIZED
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Sayısı
- 5
- Fet Type
- 2 N-Channel (Dual)
- Operating Mode
- ENHANCEMENT MODE
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