Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature
- HIGH RELIABILITY
- Terminal Kaplaması
- Matte Tin (Sn)
- Terminal Sayısı
- 5
- Drainsource On Resistancemax
- 0.0036Ohm
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- 2 N-Channel (Dual)
- Fet Feature
- Standard
- Pin Sayısı
- 5
- Transistor Application
- SWITCHING
- Montaj
- Through Hole
- Ambalaj
- Tube
- Pin Sayısı
- 5
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Continuous Drain Current Id
- 300A
- Yayın Yılı
- 2004
- Configuration
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
- Terminal Pozisyonu
- SINGLE
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Qualification Status
- Not Qualified
- Case Connection
- ISOLATED
- Rds On Max Id Vgs
- 3.6m Ω @ 150A, 10V
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 4V @ 2mA
- Parça Durumu
- Obsolete
- Number Of Elements
- 2
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Element Material
- SILICON
- Gate Charge Qg Max Vgs
- 172nC @ 10V
- RoHS Durumu
- RoHS Compliant
- Drain To Source Voltage Vdss
- 55V
- Tepe Reflow Süresi (maks. sn)
- 35
- Kılıf / Paket
- i4-Pac™-5
- Temel Parça No
- FMM
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