FMM22-06PF

Specifications

Pin Sayısı

5

Ambalaj

Tube

Yayın Yılı

2008

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

66A

Tab

Tab

Maximum Drain Source Voltage V

600

Configuration

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Kodu

e1

Typical Turnoff Delay Time Ns

60

Terminal Sayısı

5

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Typical Fall Time Ns

23

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Typical Gate Charge10v Nc

58

Operating Mode

ENHANCEMENT MODE

Fet Type

2 N-Channel (Dual)

Maximum Gate Source Voltage V

±30

Channel Type

N

Ds Breakdown Voltagemin

600V

Category

Power MOSFET

Gate Charge Qg Max Vgs

58nC @ 10V

Number Of Elements Per Chip

2

Power Max

130W

Kurşunsuz Kodu

yes

Kılıf / Paket

i4-Pac™-5

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Process Technology

HiperFET

Max Power Dissipation

130W

Fabrika Tedarik Süresi

30 Weeks

Parça Durumu

Active

Avalanche Energy Rating Eas

1000 mJ

Mounting

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Package Width

5.03

Continuous Drain Current Id

12A

Typical Rise Time Ns

20