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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 5
- Ambalaj
- Tube
- Yayın Yılı
- 2008
- Transistor Application
- SWITCHING
- Pulsed Drain Currentmax Idm
- 66A
- Tab
- Tab
- Maximum Drain Source Voltage V
- 600
- Configuration
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Kodu
- e1
- Typical Turnoff Delay Time Ns
- 60
- Terminal Sayısı
- 5
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature
- AVALANCHE RATED, UL RECOGNIZED
- Typical Fall Time Ns
- 23
- Minimum Operating Temperature C
- -55
- Channel Mode
- Enhancement
- Typical Gate Charge10v Nc
- 58
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- 2 N-Channel (Dual)
- Maximum Gate Source Voltage V
- ±30
- Channel Type
- N
- Ds Breakdown Voltagemin
- 600V
- Category
- Power MOSFET
- Gate Charge Qg Max Vgs
- 58nC @ 10V
- Number Of Elements Per Chip
- 2
- Power Max
- 130W
- Kurşunsuz Kodu
- yes
- Kılıf / Paket
- i4-Pac™-5
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Process Technology
- HiperFET
- Max Power Dissipation
- 130W
- Fabrika Tedarik Süresi
- 30 Weeks
- Parça Durumu
- Active
- Avalanche Energy Rating Eas
- 1000 mJ
- Mounting
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Package Width
- 5.03
- Continuous Drain Current Id
- 12A
- Typical Rise Time Ns
- 20
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