FMM22-05PF

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

500V

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

50nC @ 10V

Temel Parça No

FMM

Kılıf / Paket

i4-Pac™-5

Seri

HiPerFET™, PolarHT™

Kurşunsuz Kodu

yes

Power Max

132W

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

270m Ω @ 11A, 10V

Case Connection

ISOLATED

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2630pF @ 25V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

2

Vgsth Max Id

5V @ 1mA

Max Power Dissipation

132W

Fabrika Tedarik Süresi

30 Weeks

Parça Durumu

Active

Continuous Drain Current Id

13A

Yayın Yılı

2008

Çalışma Sıcaklığı

-55°C~150°C TJ

Pin Sayısı

5

Ambalaj

Tube

Montaj

Through Hole

Transistor Application

SWITCHING

JESD-609 Kodu

e1

Configuration

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.27Ohm

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Sayısı

5

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fet Feature

Standard

Pin Sayısı

5

Fet Type

2 N-Channel (Dual)