Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 5
- Terminal Kaplaması
- TIN SILVER COPPER
- Drainsource On Resistancemax
- 0.02Ohm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature
- UL RECOGNIZED, AVALANCHE RATED
- Fet Feature
- Standard
- Pin Sayısı
- 5
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- 2 N-Channel (Dual)
- Ambalaj
- Tube
- Pin Sayısı
- 5
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Yayın Yılı
- 2009
- Continuous Drain Current Id
- 53A
- Transistor Application
- SWITCHING
- Montaj
- Through Hole
- Pulsed Drain Currentmax Idm
- 300A
- ECCN Kodu
- EAR99
- Terminal Pozisyonu
- SINGLE
- Configuration
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- JESD-609 Kodu
- e1
- Rds On Max Id Vgs
- 20m Ω @ 55A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Through Hole
- Qualification Status
- Not Qualified
- Case Connection
- ISOLATED
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Input Capacitance Ciss Max Vds
- 8600pF @ 25V
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 180W
- Parça Durumu
- Active
- Vgsth Max Id
- 4.5V @ 250μA
- Avalanche Energy Rating Eas
- 800 mJ
- Number Of Elements
- 2
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Gate Charge Qg Max Vgs
- 150nC @ 10V
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Voltage Vdss
- 150V
- Temel Parça No
- FMM
- Power Max
- 180W
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