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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 125W
- Collector Emitter Voltage Vceo
- 600V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- RoHS Durumu
- ROHS3 Compliant
- Power Max
- 125W
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj
- Through Hole
- Collectoremitter Breakdown Voltage
- 600V
- Test Conditions
- 300V, 25A, 10 Ω, 15V
- Max Collector Current
- 38A
- Kılıf / Paket
- i4-Pac™-5
- Additional Feature
- HIGH RELIABILITY
- Gateemitter Thr Voltagemax
- 5V
- Fabrika Tedarik Süresi
- 6 Weeks
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Sayısı
- 5
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Pin Sayısı
- 5
- Vceon Max Vge Ic
- 2.4V @ 15V, 25A
- JESD-609 Kodu
- e1
- Case Connection
- ISOLATED
- Polaritychannel Type
- N-CHANNEL
- Turn Off Timenom Toff
- 390 ns
- Pin Sayısı
- 5
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Reverse Recovery Time
- 50 ns
- Switching Energy
- 1.1mJ (on), 600μJ (off)
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 2004
- Gateemitter Voltagemax
- 20V
- Igbt Type
- NPT
- Turn On Time
- 80 ns
- Transistor Application
- POWER CONTROL
- Gate Charge
- 140nC
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Qualification Status
- Not Qualified
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