Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Tin (Sn)
- Fonksiyon Sayısı
- 1
- Uzunluk
- 4.9mm
- Operating Mode
- SYNCHRONOUS
- Memory Types
- Non-Volatile
- Memory Format
- FLASH
- RoHS Durumu
- ROHS3 Compliant
- Supply Voltagemax Vsup
- 3.6V
- JESD-609 Kodu
- e3
- Memory Interface
- SPI - Quad I/O, QPI, DTR
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Kurşunsuz Kodu
- yes
- Jesd30 Code
- R-PDSO-G8
- Memory Density
- 33554432 bit
- Genişlik
- 3.9mm
- Write Cycle Time Word Page
- 800μs
- Clock Frequency
- 133MHz
- Yüzey Montaj
- YES
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Parallelserial
- SERIAL
- Supply Voltagemin Vsup
- 2.3V
- Memory Size
- 32Mb 4M x 8
- Çalışma Sıcaklığı
- -40°C~105°C TA
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Terminal Sayısı
- 8
- Maks. Oturma Yüksekliği
- 1.75mm
- Memory Width
- 8
- Alternate Memory Width
- 1
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Montaj Tipi
- Surface Mount
- Terminal Adımı
- 1.27mm
- Fabrika Tedarik Süresi
- 8 Weeks
- Besleme Gerilimi
- 2.3V~3.6V
- Organization
- 4MX8
- Terminal Pozisyonu
- DUAL
- Besleme Gerilimi
- 3V
- Parça Durumu
- Active
- Ambalaj
- Tube
- Programming Voltage
- 3V
Related Products
Microchip Technology
11AA010-I/MS
Memory
Microchip Technology
11AA010-I/P
Memory
Microchip Technology
11AA010-I/SN
Memory
Microchip Technology
11AA010-I/TO
Memory
Microchip Technology
11AA010T-I/MNY
Memory
Microchip Technology
11AA010T-I/MS
Memory
Microchip Technology
11AA010T-I/SN
Memory
Microchip Technology
11AA010T-I/TT
Memory