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IS25LP016D-JNLE

ISSI, Integrated Silicon Solution Inc

IS25LP016D-JNLE

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Supply Voltagemax Vsup
3.6V
RoHS Durumu
ROHS3 Compliant
Memory Format
FLASH
Memory Types
Non-Volatile
Operating Mode
SYNCHRONOUS
Uzunluk
4.9mm
Fonksiyon Sayısı
1
Terminal Kaplaması
Tin (Sn)
Yüzey Montaj
YES
Clock Frequency
133MHz
Write Cycle Time Word Page
800μs
Genişlik
3.9mm
Memory Density
16777216 bit
Jesd30 Code
R-PDSO-G8
HTS Kodu
8542.32.00.51
Kurşunsuz Kodu
yes
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Memory Interface
SPI - Quad I/O, QPI, DTR
JESD-609 Kodu
e3
Montaj Tipi
Surface Mount
Nem Hassasiyeti (MSL)
3 (168 Hours)
Alternate Memory Width
1
Memory Width
8
Maks. Oturma Yüksekliği
1.75mm
Terminal Sayısı
8
Tepe Reflow Süresi (maks. sn)
10
Çalışma Sıcaklığı
-40°C~105°C TA
Memory Size
16Mb 2M x 8
Supply Voltagemin Vsup
2.3V
Parallelserial
SERIAL
Tepe Reflow Sıcaklığı (°C)
260
Parça Durumu
Active
Programming Voltage
3V
Ambalaj
Tube
Besleme Gerilimi
3V
Terminal Pozisyonu
DUAL
Organization
2MX8
Besleme Gerilimi
2.3V~3.6V
Fabrika Tedarik Süresi
8 Weeks
Terminal Adımı
1.27mm

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