RT1N140M

Specifications

Ihs Manufacturer

ISAHAYA ELECTRONICS CORP

Dc Current Gainmin Hfe

100

Operating Temperaturemax

150 °C

Terminal Pozisyonu

DUAL

Polaritychannel Type

NPN

Power Dissipationmax Abs

0.2 W

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Vcesatmax

0.3 V

Part Life Cycle Code

Contact Manufacturer

Number Of Terminals

3

Package Body Material

PLASTIC/EPOXY

Configuration

SINGLE WITH BUILT-IN RESISTOR

Package Style

SMALL OUTLINE

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G3

Number Of Elements

1

Transition Frequencynom Ft

200 MHz

Yüzey Montaj

YES

Collector Currentmax Ic

0.1 A

Package Description

,

Power Dissipation Ambientmax

0.2 W

REACH Uyumluluk Kodu

unknown

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Collectoremitter Voltagemax

50 V

HTS Kodu

8541.21.00.75