RFD10P03LSM9A

Specifications

Drainsource On Resistancemax

0.22 Ω

JESD-609 Kodu

e0

ECCN Kodu

EAR99

Jedec95 Code

TO-252AA

Additional Feature

MEGAFET

Yüzey Montaj

YES

Rohs Code

No

Part Life Cycle Code

Transferred

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Package Body Material

PLASTIC/EPOXY

Terminal Kaplaması

TIN LEAD

Case Connection

DRAIN

Terminal Formu

GULL WING

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

unknown

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Id

10 A

Package Style

SMALL OUTLINE

Operating Mode

ENHANCEMENT MODE

Package Description

SMALL OUTLINE, R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Ihs Manufacturer

INTERSIL CORP

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

25 A

Power Dissipationmax Abs

65 W

Ds Breakdown Voltagemin

30 V

Operating Temperaturemax

175 °C

Number Of Terminals

2

Polaritychannel Type

P-CHANNEL