HUF75545S3ST

Specifications

Number Of Elements

1

Package Shape

RECTANGULAR

Kapasitans

2.2pF

Transport Packaging Sizequantity

40*23*16/50

Drain To Source Breakdown Voltage

80V

Rds On Max Id Vgs

10m Ω @ 75A, 10V

Working Load

3...5 kg

Gate Charge Qg Max Vgs

235nC @ 20V

Parça Durumu

Active

Polaritychannel Type

N-CHANNEL

Power Dissipation Max

270W Tc

Operating Voltage

50V

Continuous Drain Current Id

75A

Ambalaj

Tape & Reel (TR)

Seri

UltraFET™

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Exterior Housing Material

1

Pin Sayısı

3

Hole Diameter

5 mm

Ds Breakdown Voltagemin

80 V

Case Connection

DRAIN

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Thread

M5

ECCN Kodu

EAR99

Number Of Terminals

2

Fet Type

N-Channel

Drain Currentmax Id

75 A

Current Continuous Drain Id25

75A Tc

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

40 ns

Part Life Cycle Code

Transferred

Operating Mode

ENHANCEMENT MODE

Mounting

SMD

Dielektrik

C0G (NP0)

Montaj

Surface Mount

Yüzey Montaj

YES

Akım Değeri

75A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage

4V